Reduced dislocation density in GaxIn1−xP compositionally graded buffer layers through engineered glide plane switch

Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers

Improving the crystal quality of AlGaN epitaxial layers is essential for the realization of efficient III-nitride-based light emitting diodes (LEDs) with emission wavelengths below 365 nm. Here, we report on two different approaches to improve the material quality of AlGaN buffer layers for such UV-LEDs, which are known to be effective for the MOVPE growth of GaN layers. Firstly, we grew AlGaN ...

Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates Citation

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Shuffle-glide dislocation transformation in Si

The transformation of dislocation cores from the shuffle to the glide set of {111} glide planes in Si is examined in this work. The transformation is thermally activated and is favored by a resolved shear stress which applies no force on the original perfect shuffle dislocation. A resolved shear stress driving dislocation motion in the glide plane is not observed to promote the transition. The ...

On the nature of cross-hatch patterns on compositionally graded Si1xGex alloy layers

Fabrication of compositionally and structurally graded Ti-TiO2 structures using laser engineered net shaping (LENS).

Novel structures with functional gradation in composition and structure were successfully made in Ti-TiO(2) combination using laser engineered net shaping. The addition of fully dense, compositionally graded TiO(2) ceramic on porous Ti significantly increased the surface wettability and hardness. The graded structures with varying concentrations of TiO(2) on the top surface were found to be non...